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SL05T1 Series
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
V RWM
(V)
I R @ V RWM
( m A)
Breakdown Voltage
(Note 4)
V BR @ 1 mA (Volts)
Min Max
V C , Clamping Voltage
(Note 5)
@1A @5A
(V) (V)
Max
I PP
(A)
Capacitance
@ V R = 0 V, 1 MHz (pF)
Typ Max
SL05
SL12
SL15
SL24
L05
L12
L15
L24
5.0
12
15
24
20
1.0
1.0
1.0
6.0
13.3
16.7
26.7
8.0
15.5
18.5
29
9.8
19
24
43
11
24
30
55
17
12
10
5.0
3.5
3.5
3.5
3.5
5.0
5.0
5.0
5.0
4. V BR measured at pulse test current of 1 mA at an ambient temperature of 25 ° C
5. Surge current waveform per Figure 2
TYPICAL CHARACTERISTICS
10
1
100
90
80
70
60
50
t r
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
40
0.1
30
20
10
t P
0.01
0.1
1
10
100
1000
0
0
20
40
60
80
4
3.5
PULSE WIDTH ( m s)
Figure 1. Maximum Peak Power Rating
10
t, TIME ( m s)
Figure 2. 8 × 20 m s Pulse Waveform
3
2.5
2
SL05
1
SL05T1
1.5
1
0.5
SL15
SL24
0.1
0
@ ZERO BIAS
@ 50% V RWM
@ V RWM
0.01
? 55
25
150
TEMPERATURE ( ° C)
Figure 3. Typical Junction Capacitance
http://onsemi.com
3
Figure 4. Typical Leakage Over Temperature
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